Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

GaN Power HEMT (High Electron Mobility Transistor) have been introduced in the late 80’s of the last century in their normally on version as very performing RF devices [1-3]. Some works have been dedicated to study Single Event Effects (SEEs) induced by heavy ion irradiations in normally on GaN power HEMT for RF applications [4-8]. A first study about SEE induced by heavy ions in normally off GaN has been recently presented and the occurrence of SEB was for the first time observed in these devices [9]. In this paper an experimental study of Single Event Effects, SEE, induced by heavy ion irradiation on commercial GaN power HEMTs rated between 40V and 200V is presented.